Semiconductor device
US12342590B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Feb 23, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Aug 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/837
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having an active region in which a main switching element structure is formed, a current sense region in which a sense switching element structure is formed, and a peripheral region located around the active region and the current sense region. The semiconductor substrate is a 4H-SiC substrate having an off angle in a <11-20> direction. The current sense region is disposed in a range where the active region is not present when viewed along the <1-100> direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.