Diode structure
US12342602B2 · kind B2 · utility
0Cited by
5References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2021 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Jul 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
The present disclosure relates to a structure comprising, in a trench of a substrate, a first conductive region separated from the substrate by a first distance shorter than approximately 10 nm; and a second conductive region extending deeper than the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.