Semiconductor device
US12342607B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2020 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Nov 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
Abstract
A semiconductor device includes a transistor portion which includes a plurality of gate structure portions, and a diode portion which includes a cathode region in a lower surface of a semiconductor substrate. Each of the gate structure portions includes a gate trench portion, an emitter region of a first conductive type which is provided between an upper surface of the semiconductor substrate and a drift region to abut on the gate trench portion, and a base region of a second conductive type which is provided between the emitter region and the drift region to abut on the gate trench portion. A first threshold of the gate structure portion with a shortest distance to the cathode region in a top view is lower than a second threshold of the gate structure portion with a longest distance to the cathode region by 0.1 V or more and 1 V or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.