Deposition of ceramic layers using liquid organometallic precursors
US12344932B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 20, 2023 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Apr 15, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E30/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metal or ceramic layer may be deposited on nuclear materials by chemical vapor deposition using a non-halogenated liquid organometallic metal precursor. The chemical vapor deposition is carried out by a method including steps of introducing nuclear fuel particles into a fluidized bed reactor, and heating the fluidized bed reactor to a desired operating temperature T1. A flow of a carrier gas is initiated through a vaporizer, and the non-halogenated liquid organometallic metal precursor is injected into the vaporizer and vaporized. A first mixture of the carrier gas and the vaporized non-halogenated liquid organometallic metal precursor may be mixed with a gaseous carbon source, a gaseous nitrogen source, a gaseous oxygen source, or a mixture thereof to produce a second mixture; and the second mixture flows into the fluidized bed reactor at operating temperature T1, allowing deposition of a desired ceramic coating on the particles. The non-halogenated liquid organometallic metal precursor may be a compound of Zr, Hf, Nb, Ta, W, V, Ti, or a mixture thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.