Electronic device
US12347378B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2023 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Dec 6, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2330/12
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An electronic device includes a substrate, a first silicon transistor, a second silicon transistor and a first oxide semiconductor transistor. The first silicon transistor, the second silicon transistor and the first oxide semiconductor transistor are disposed on the substrate. The first silicon transistor has a first terminal electrically connected to a first voltage level, a second terminal and a control terminal. The second silicon transistor has a first terminal electrically connected to the second terminal of the first silicon transistor, a second terminal electrically connected to a second voltage level, and a control terminal electrically connected to the control terminal of the first silicon transistor. The first oxide semiconductor transistor has a first terminal electrically connected to the first terminal of the second silicon transistor. Wherein, a voltage value of the first voltage level is greater than a voltage value of the second voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.