Transistor, circuit substrate, and display device
US12347403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2024 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Feb 23, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2310/08
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A transistor includes a first electrode, a first semiconductor portion that is at least partly superimposed on the first electrode and that is composed of a semiconductor material, a first insulating film that is interposed between the first electrode and the first semiconductor portion, a second electrode that is superimposed on a part of the first semiconductor portion and that is connected to the first semiconductor portion, and a third electrode that is located in a layer in which the second electrode is located, that is superimposed on a part of the first semiconductor portion, and that is connected to the first semiconductor portion. An electric potential of the second electrode is lower than that of the third electrode. The third electrode includes a first portion that is spaced from the second electrode and a second portion that is spaced from the second electrode opposite the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.