Semiconductor devices including a through-hole electrode
US12347747B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2022 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Sep 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, an etch stop layer on the substrate, a through-hole electrode extending through the substrate and the etch stop layer in a vertical direction substantially perpendicular to an upper surface of the substrate, and a conductive pad. The etch stop layer includes a first surface adjacent to the substrate and a second surface opposite the first surface. The through-hole electrode includes a protrusion portion that protrudes from the second surface of the etch stop layer. The conductive pad covers the protrusion portion of the through-hole electrode. The protrusion portion of the through-hole electrode is not flat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.