Semiconductor structure with crack-blocking three-dimensional structure
US12347790B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Aug 17, 2022 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Oct 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semi-conductor structure with a crack-blocking three-dimensional structure is described. The semiconductor structure includes a substrate; a functional circuit structure disposed in an area of the substrate; and a three-dimensional structure having at least one continuous trench that extends perpendicularly towards a base surface of the substrate and that surrounds the area of the substrate containing the functional circuit structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.