Patent · US Active

Tunable semiconductor laser device

US12348003B2 · kind B2 · utility

0Cited by

11References

19Claims

0Family size

Assignee

II-VI DELAWARE, INC. · US

Inventors

Jan-Olof Wesstroem · Stockholm, SE
Per Granestrand · Tyresö, SE

Key dates

Filing date	Apr 26, 2023
Grant date	Jul 1, 2025
Priority date	—
Expiry date	Oct 3, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/1218
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A laser device includes front and back DBRs and an interferometer. The front DBR is coupled to a front DBR electrode. The front DBR forms a first tunable multi-peak lasing filter. The back DBR is coupled to a back DBR electrode. The back DBR forms a second tunable multi-peak lasing filter. The interferometer part is coupled between the front DBR and the back DBR. The interferometer part includes first and second waveguide combiners and first and second interferometer waveguides coupled therebetween. The first waveguide combiner couples the interferometer part to the back DBR. The second waveguide combiner couples the interferometer part to the front DBR. The first interferometer waveguide is coupled to an interferometer electrode. The interferometer forms a third tunable multi-peak lasing filter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.