Semiconductor structure and method for manufacturing same
US12349334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2022 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Nov 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A semiconductor structure includes a substrate, a gate structure, a cover layer and a first sacrificial structure. The substrate includes discrete semiconductor channels arranged at a top of the substrate. The gate structure is disposed in a middle region of a semiconductor channel, and includes a ring structure and a bridge structure. The ring structure encircles the semiconductor channel, and the bridge structure penetrates through the semiconductor channel and extends to an inner wall of the ring structure along a penetrating direction. The cover layer is located between adjacent semiconductor channels, and includes a first communication hole. The first sacrificial structure is located on the cover layer, and includes a second communication hole. An inner sidewall of the second communication hole has an irregular shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.