Elementary cell comprising a resistive memory and a device intended to form a selector, cell matrix, associated manufacturing and initialization methods
US12349370B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 11, 2020 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | May 17, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An elementary cell includes a device and a non-volatile resistive memory mounted in a series, the device including an upper selector electrode, a lower selector electrode, a layer made up of a first active material, referred to as an active selecting layer, the device being intended to form a volatile selector; the memory including an upper memory electrode, a lower memory electrode, a layer made of at least a second active material, referred to as an active memory layer, the active selecting layer being in a conductive crystalline state and the memory being in a very strongly resistive state that is more resistive than the strongly resistive state of the memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.