Photodetector module comprising emitter and receiver
US12349486B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 10, 2024 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Jan 10, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1433
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.