Semiconductor structure and manufacturing method of the same
US12349493B2 · kind B2 · utility
0Cited by
4References
20Claims
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Key dates
| Filing date | Jul 16, 2021 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Apr 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
A semiconductor device, a back-side deep trench isolation (BDTI) structure of a semiconductor device, and method of manufacturing a semiconductor structure are provided. The semiconductor device, comprising: a pixel region disposed within a substrate and comprising an image sensing element configured to convert electromagnetic radiation into an electrical signal; and one or more BDTI structures extending from a first-side of the substrate to positions within the substrate; wherein the one or more of BDTI structures comprise one or more ferroelectric materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.