Transistor and manufacturing method thereof
US12349583B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 25, 2021 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | Nov 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/484
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application provides a manufacturing method of a transistor, including: providing a substrate, a solution, an active layer material and an auxiliary electrode; the active layer material is dispersed in the solution, and the active layer material is charged; positioning the auxiliary electrode on one side of the substrate; positioning the solution between the auxiliary electrode and the gate insulating layer; and electrifying the gate and the auxiliary electrode; an electrical property of the gate is opposite to an electrical property of the active layer material, and the active layer material is deposited on the gate insulating layer under an action of the electric field to form a source layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.