Lithium niobate semiconductor structure and manufacturing method thereof

US12349595B2 · kind B2 · utility

Assignee

• Nankai University · CN

Inventors

• Guoquan Zhang · Columbia, US
• Yuezhao Qian · Tianjin, CN
• Yuchen Zhang · Tianjin, CN
• Jingjun Xu · Tianjin, CN

Key dates

• Filing date: Dec 28, 2020
• Grant date: Jul 1, 2025
• Expiry date: May 23, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N30/045

Abstract

A lithium niobate semiconductor structure includes: a first lithium niobate material layer, a second lithium niobate material layer and a third lithium niobate material layer. A polarization direction of a ferroelectric domain of the first lithium niobate material layer is a first direction. The second lithium niobate material layer is spaced apart from the first lithium niobate material layer, and a polarization direction of a ferroelectric domain of the second lithium niobate material layer is the first direction. The third lithium niobate material layer is sandwiched between the first lithium niobate material layer and the second lithium niobate material layer, and a polarization direction of a ferroelectric domain of the third lithium niobate material layer is a second direction; the first direction is opposite to the second direction.