Preparation method for copper plate-covered silicon nitride ceramic substrate

US12351524B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Xuejian LIU · Shanghai, CN
• Hui Zhang · Pittsburgh, US
• Xiumin Yao · Shanghai, CN
• Yan Liu · Tangshan City, CN
• Jindi Jiang · Shanghai, CN
• Zhengren Huang · Shanghai, CN
• Zhongming Chen · Nanhu, CN

Key dates

• Filing date: Jan 17, 2022
• Grant date: Jul 8, 2025
• Expiry date: Jun 13, 2042

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C04B2237/74
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A preparation method for a copper plate-covered silicon nitride ceramic substrate is provided. The structure of the copper plate-covered silicon nitride ceramic substrate includes a silicon nitride ceramic substrate, copper sheets disposed on the upper and lower sides of the silicon nitride ceramic substrate and soldering layers disposed between the copper sheets and the silicon nitride ceramic substrate; the composition of the silicon nitride ceramic substrate comprises a silicon nitride phase (more than or equal to 95 wt %); and a grain boundary phase (containing at least three elements (Y, Mg and O) and less than or equal to 5 wt %, and the content of a crystalline phase in the grain boundary phase is more than or equal to 40 vol %); and the sintering aids are Y2O3 and MgO. The two-step sintering process comprises: in a nitrogen atmosphere, performing low-temperature heat treatment and high-temperature heat treatment in sequence.