Patent · US Active

Deposition of non-stoichiometric metal compound layer

US12351901B2 · kind B2 · utility

0Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 4, 2022
Grant dateJul 8, 2025
Priority date
Expiry dateMar 4, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/332
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method of depositing a layer on a piece by sputter deposition, a coater and a processor for controlling a coater in accordance with the method are provided. The method includes providing deposition of metallic and reactive species simultaneously on a piece for forming a layer under predetermined sputtering conditions, thereby providing a deposited layer on the piece comprising a metal compound. The deposited layer is subsequently irradiated and the optical transmittance is measured. A measured parameter related to the measured radiation is compared with one stored value of that parameter. The sputtering conditions are thereby adapted as a result of the comparison.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.