RF power amplifier integrated circuit having precision power detector
US12352790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Apr 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a power amplifier and a power detector. The power detector has a VDET node and a VREF node. A first filter coupled to the VDET node outputs a signal VDET onto a VDET terminal. A second filter coupled the VREF node outputs a signal VREF onto a VREF terminal. The signals VDET and VREF are generated so that the voltage difference between the two signals varies in proportion to the RF output power magnitude with an accuracy of ±0.1 decibels over a −45° C. to +85° C. temperature range. An amount of the RF signal as output by the power amplifier is coupled onto the VDET node and is detected by a half-wave rectifying RF detector diode. The diode has a capacitance that increases with temperature, so a temperature compensation circuit that has an admittance that decreases with temperature is coupled in parallel with the detector diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.