Patent · US Active

Method for on-silicon integration of a component III-V and on-silicon integrated component III-V

US12353068B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignees

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
THALES · FR

Inventors

Delphine Neel · Vénissieux, FR
David Bitauld · Cambridge, GB

Key dates

Filing date	Nov 9, 2022
Grant date	Jul 8, 2025
Priority date	—
Expiry date	Oct 20, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component from the second substrate, so as to enable a coupling between the waveguide and the III-V component, by preserving a III-V-based material layer extending laterally. The method also includes forming by epitaxy from the III-V layer, an InP:Fe-based structure laterally bordering the III-V component, forming a layer including contacts configured to contact the III-V component, and transferring a third silicon-based substrate onto the layer including the contacts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.