SOT reader with recessed SOT topological insulator material

US12354629B2 · kind B2 · utility

Assignee

• Western Digital Technologies, Inc. · US

Inventors

• Quang Le · San Jose, US
• Rohan Babu NAGABHIRAVA · Virginia Beach, US
• Xiaoyong Liu · San Jose, US
• Brian R. York · San Jose, US
• Cherngye Hwang · San Jose, US
• Son Le · Gilroy, US
• Randy Simmons · West Chester, US
• Kuok San Ho · Emerald Hills, US
• Hisashi Takano · San Jose, US

Key dates

• Filing date: Jul 31, 2023
• Grant date: Jul 8, 2025
• Expiry date: Oct 12, 2043

Classification

• Technology area (CPC G): Physics
• CPC primary: G11B2005/3996
• WIPO field: Audio-visual technology
• WIPO sector: Electrical engineering

Abstract

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S1), a free layer (FL) disposed over the BiSb layer, and a second shield (S2) disposed over the FL. The S1, the FL, and the S2 are disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and/or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the S2 to the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the S2 to the S1.