Patent · US Active

Efficient laser system

US12355207B1 · kind B1 · utility

0Cited by
1References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 12, 2024
Grant dateJul 8, 2025
Priority date
Expiry dateAug 12, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/22
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The present disclosure comprises a laser semiconductor system, with the system comprising an n-side layer, an active region, a p-side waveguide layer, and a cladding layer. The system also comprises a plurality of sections, with at least a front section at the front of the semiconductor and a rear section at the rear of the semiconductor. A thickness of the p-side waveguide layer may increase monotonically in each of the plurality of sections in the direction from the front section to the rear section.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.