Efficient laser system
US12355207B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2024 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Aug 12, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure comprises a laser semiconductor system, with the system comprising an n-side layer, an active region, a p-side waveguide layer, and a cladding layer. The system also comprises a plurality of sections, with at least a front section at the front of the semiconductor and a rear section at the rear of the semiconductor. A thickness of the p-side waveguide layer may increase monotonically in each of the plurality of sections in the direction from the front section to the rear section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.