Quantum dot lasers and methods for making the same

US12355213B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• John E. Bowers · Lompoc, US
• Arthur C. Gossard · Hackettstown, US
• Daehwan Jung · Goleta, US
• Kunal Mukherjee · Goleta, US
• Justin Norman · Goleta, US
• Jennifer Selvidge · Goleta, US

Key dates

• Filing date: May 24, 2019
• Grant date: Jul 8, 2025
• Expiry date: Mar 5, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/173
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A quantum dot (QD) laser comprises a semiconductor substrate and an active region epitaxially deposited on the semi-conductor substrate. The active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers. A net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.