Surface acoustic wave filter wafer-level packaging structure and method
US12355414B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 18, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Mar 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/1092
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A fabrication method of a surface acoustic wave (SAW) filter includes obtaining a filter wafer, which includes: obtaining a first substrate; and forming an interdigital transducer (IDT) on the first substrate, the IDT including a first input and output end, a second input and output end, and an interdigital portion. The method further includes: forming a dielectric layer on the filter wafer, the dielectric layer covering the first input and output end and the second input and output end of the IDT, and exposing the interdigital portion; forming a passivation layer on the dielectric layer; forming a bonding layer on the passivation layer; and bonding a second substrate to the filter wafer via the bonding layer, wherein a cavity is enclosed by the second substrate and the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.