Bulk acoustic wave resonator with metal bonding layer
US12355420B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 23, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Jan 6, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave (BAW) resonator includes: a substrate; a piezoelectric layer disposed above the substrate; a first electrode disposed below the piezoelectric layer and including a first portion and a second portion spaced apart from each other; a second electrode disposed above the piezoelectric layer; a first dielectric layer, a second dielectric layer, and a third dielectric layer sequentially disposed between the substrate and the piezoelectric layer in an order from the piezoelectric layer to the substrate; a cavity disposed below the first portion of the first electrode; a metal bonding layer disposed between the third dielectric layer and the substrate; and a ground pad metal layer disposed on the piezoelectric layer and electrically connected to the metal bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.