Memory and method for preparing memory

US12356602B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventors

• Mengmeng YANG · Hefei, CN
• Xiaojie Li · Xi'an, CN
• Xiaoling Wang · Hefei, CN

Key dates

• Filing date: Feb 10, 2022
• Grant date: Jul 8, 2025
• Expiry date: Sep 5, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A memory and a method for preparing a memory are provided. The method for preparing the memory includes: providing a substrate, in which the substrate includes a first N-type active region and a first P-type active region; forming an epitaxial layer covering the first P-type active region, in which the epitaxial layer exposes the first N-type active region; simultaneously forming a first gate dielectric layer covering the first N-type active region and a second gate dielectric layer covering the epitaxial layer, in which a thickness of the first gate dielectric layer is substantially the same as a thickness of the second gate dielectric layer; forming a first gate covering the first gate dielectric layer to form a first N-channel Metal Oxide Semiconductor (NMOS) device; and forming a second gate covering the second gate dielectric layer to form a first P-channel Metal Oxide Semiconductor (PMOS) device.