Memory device and preparing method thereof

US12356632B2 · kind B2 · utility

Assignees

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN
• BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY · CN

Inventors

• Xiaoguang Wang · Hefei, CN
• Dinggui Zeng · Hefei, CN
• Huihui Li · Beijing, CN
• Kanyu Cao · Hefei, CN

Key dates

• Filing date: Jun 23, 2022
• Grant date: Jul 8, 2025
• Expiry date: Jun 15, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6755

Abstract

The present application relates to a memory device and a preparing method thereof. The memory device includes: a substrate, and a plurality of memory cells disposed in an array on the substrate. Memory cells in adjacent rows are staggered in a row direction, and a distance between two adjacent memory cells in any row is a first distance. Memory cells in adjacent columns are staggered in a column direction, and a staggered distance is less than the first distance.