Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices
US12356642B2 · kind B2 · utility
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Key dates
| Filing date | Feb 7, 2024 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Feb 7, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
Semiconductor devices including a capacitor and methods of forming the same are provided. The semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. The lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.