Trench-gate transistor device
US12356678B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Aug 19, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Dec 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A trench-gate transistor device includes a substrate and a transistor structure. The transistor structure includes a plurality of superjunctions arranged in a first direction, a rectifying area that has at least one Schottky-based diode, and at least one active unit that is located at a side of said rectifying area in a second direction that intersects with the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.