Patent · US Active

Protection circuit with a FET device coupled from a protected bus to ground

US12356728B2 · kind B2 · utility

0Cited by
3References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 2021
Grant dateJul 8, 2025
Priority date
Expiry dateJan 24, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D10/00
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a voltage input circuit node and a ground voltage node. A first transistor is coupled between the voltage input circuit node and the ground voltage node. A triggering circuit is coupled between the voltage input circuit node and the ground voltage node in parallel with the first transistor. The triggering circuit includes a trigger diode. An output of the triggering circuit is coupled to a control terminal of the first transistor. A load is powered by coupling the load between the voltage input circuit node and the ground voltage node.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.