Semiconductor apparatus and device
US12356738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Oct 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photoelectric conversion member included in a photodiode PD2 is disposed at the position overlapping with a section B1, a photoelectric conversion member included in a photodiode PD1 is disposed at the position overlapping with a section B2, and a photoelectric conversion member included in the photodiode PD1 is disposed at the position overlapping with a section B3. A plurality of electrodes 25 each forming a Metal-Insulator-Semiconductor (MIS) structure together with a semiconductor layer 10 is disposed on a front surface FS of the semiconductor layer 10. At least one of the plurality of electrodes 25 overlaps with at least one of eight sections B2 to B9.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.