Passivating contact structure and preparation method thereof, solar cell and preparation method thereof

US12356756B2 · kind B2 · utility

Assignee

• TRINA SOLAR CO., LTD. · CN

Inventors

• Chengfa Liu · Changzhou City, CN
• Hong Chen · Changzhou City, CN
• Yaqian Zhang · Beijing, CN
• Xiaopeng Wu · Kyoto, JP
• Yugang Lu · Changzhou City, CN
• Shuai Zhang · Shanghai, CN

Key dates

• Filing date: Oct 24, 2023
• Grant date: Jul 8, 2025
• Expiry date: Oct 24, 2043

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present application relates to a passivating contact structure and a preparation method thereof, and a solar cell and a preparation method thereof. In the method for preparing the passivating contact structure, a tunnel layer is formed on a side of a substrate; an initial stack structure is formed on a side of the tunnel layer away from the substrate. The initial stack structure includes polysilicon layers and a doped layer alternately stacked. In the initial stack structure, an innermost layer is most adjacent to the tunnel layer, an outermost layer is most away from the tunnel layer, the innermost layer and the outermost layer are both polysilicon layers. The doped layer is a polysilicon material layer doped with a dopant. The dopant is activated, such that the dopant diffuses into the polysilicon layers, thereby transforming the initial stack structure into a doped stack structure with uniform distribution of dopant.