Thin film transistor array substrate
US12356797B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2022 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Mar 28, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/331
Abstract
A thin film transistor array substrate comprises a substrate, a light shielding layer provided on the substrate, and a thin film transistor provided overlapped by the light shielding layer, wherein the thin film transistor includes a semiconductor layer on the light shielding layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, and a source electrode connected to a first side of the semiconductor layer and a drain electrode connected to a second side of the semiconductor layer, wherein at least one of the light shielding layer, the gate electrode, the source electrode, and the drain electrode includes a first quantum-dot layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.