Hall integrated sensor and corresponding manufacturing process
US12356869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2020 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | Mar 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated Hall sensor is provided with: a main wafer (10) of semiconductor material having a substrate (101) with a first surface (101a) and a second surface (101b), opposite to the first surface (101a) along a vertical axis (y); Hall sensor terminals (1, 2, 3, 4; 1′, 2′, 3′, 4′) arranged at least one of the first and second surfaces (101a, 101b) of the substrate (101); an isolation structure (109) in the substrate (101) defining a Hall sensor plate (103) of the integrated Hall sensor, the Hall sensor terminals being arranged in the isolation structure (109). The integrated Hall sensor moreover has a test or calibration coil integrated in the wafer (10), having a plurality of windings formed, at least in part, by metal portions (130b, 170b; 130a, 170a) arranged above the first and second surfaces (101a, 101b) of the substrate (101) and defining an inner volume (1001) entirely enclosing the Hall sensor plate (103).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.