Kinetic model for molecular beam epitaxy growth of III-V bismide alloys
US12359340B2 · kind B2 · utility
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Key dates
| Filing date | Dec 16, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Dec 30, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates in part to a growth model for the growth of Group III-Group V (III-V) alloys by molecular beam epitaxy (MBE) based on the kinetics of adsorption, desorption, incorporation, anion exchange, anion-assisted removal, and surface droplet accumulation of the Group V elements. The invention also relates to methods to optimize MBE growth conditions used to produce a target III-V alloy composition. The invention is further related to methods of predicting III-V alloy compositions resulting from a set of MBE growth conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.