Patent · US Active

Process for fabricating a photonics-on-silicon optoelectronic system comprising an optical device coupled to an integrated photonic circuit

US12360311B2 · kind B2 · utility

0Cited by

2References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Karim Hassan · Auxerre, FR
Quentin Wilmart · Grenoble, FR
Bertrand Szelag · Grenoble, FR

Key dates

Filing date	Sep 14, 2022
Grant date	Jul 15, 2025
Priority date	—
Expiry date	Jul 14, 2043

Classification

Technology area (CPC G)Physics
CPC primaryG02B2006/12176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A process for fabricating an optoelectronic system having an optical device coupled to an integrated photonic circuit includes producing a lower waveguide from the thin single-crystal-silicon layer of a first SOI substrate, then joining a second SOI substrate thereto and producing an intermediate waveguide from the thin single-crystal-silicon layer of the second SOI substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.