Optical semiconductor device
US12360405B2 · kind B2 · utility
0Cited by
8References
17Claims
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Key dates
| Filing date | Jul 8, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jul 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/06
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers include: a first quantum dot layer doped with a p-type impurity; and a second quantum dot layer doped with an n-type impurity and having an emission wavelength different from that of the first quantum dot layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.