Compositions for removing photoresists and methods of manufacturing semiconductor devices and semiconductor packages using the compositions
US12360457B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 17, 2024 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jun 17, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.