Plasma processing apparatus and semiconductor fabrication method using the same
US12362216B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jan 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68785
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a plasma processing apparatus comprising a plasma electrode, an electrostatic chuck, and a diode board. The electrostatic chuck includes a microheater layer and a chuck electrode. The microheater layer includes an inner heater part and an outer heater part. The inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer, and a second inner heater in a second inner region that circumferentially surrounds the first inner region. The outer heater part includes a first outer heater in a first outer region that circumferentially surrounds the second inner region, and a second outer heater in a second outer region that circumferentially surrounds the first outer region. A distance between centers of the first and second outer heaters is less than that between centers of the first and second inner heaters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.