Method for manufacturing semiconductor device, semiconductor device, and semiconductor member
US12362248B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jul 25, 2024 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jul 25, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5386
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for thermo-compression bonding (TCB) a bridge die 20 having a TSV 23 to a redistribution layer is disclosed. In this method, a terminal electrode 22 and an upper end 23a of the TSV 23 on the bridge die 20 are covered with a thermosetting resin film (e.g. DAF) to form a resin layer 24, which is then cured. A metal collet C that sucks the bridge die 20 is heated, and the heat is transferred to the entire surface 24a of the resin layer 24 while applying pressure, thereby heat-bonding a lower end 23b of the TSV 23 to the wiring electrode of the redistribution layer. According to this method, the amount of heat transferred to a bonded portion between the lower end 23b and the wiring electrode increases. The pressure during heat-bonding is applied to the entire surface of the resin layer 24. Thermo-compression is performed reliably.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.