Power semiconductor module having a substrate arrangement, having power semiconductor components and having a foil stack arrangement

US12362312B2 · kind B2 · utility

Assignee

• SEMIKRON ELEKTRONIK GMBH & CO. KG · DE

Inventors

• Ingo Bogen · Nuremberg, DE
• Stefan OEHLING · Uttenreuth, DE

Key dates

• Filing date: Sep 2, 2022
• Grant date: Jul 15, 2025
• Expiry date: Jan 18, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/73263
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module has a substrate arrangement which has a substrate, wherein the respective substrate has conductor tracks, power semiconductor components arranged on the substrate conductor tracks and electrically conductively contacted therewith, a foil stack arrangement which has at least one foil stack, and the foil stack comprises foil stack conductor tracks. The power semiconductor components are electrically conductively connected to by the substrate conductor tracks and the foil stack conductor tracks to form a circuit, and having an electrically conductive bridging element which has first and second contact sections extending from the foil stack arrangement and a connecting section which connects the first and second contact sections, the first contact section is electrically conductively contacted with a first substrate conductor track or with a foil stack conductor track, and the second contact section is electrically conductively contacted with a second substrate conductor track or with a foil stack conductor track, the bridging element is electrically connected in parallel with at least one section of a foil stack conductor track of the foil stack.