Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
US12362541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Feb 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of incorporating a control structure within a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming an active region over the first mirror, forming a spacer on a surface of the active region, forming a control structure on a surface of the spacer, and forming a second mirror over the control structure. The active region and the spacer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence. The second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The control structure is formed using a chemical etching process during a transition period between the MBE phase and the MOCVD phase of the multiphase growth sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.