Semiconductor devices and data storage systems including the same
US12363899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jan 9, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a first region and a second region, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the second substrate, and extending by different lengths in a second direction on the second region to have pad regions in which upper surfaces thereof are exposed, channel structures penetrating the gate electrodes, extending in the first direction, and respectively including a channel layer, on the first region, contact plugs penetrating the pad regions of the gate electrodes and extending in the first direction, and contact insulating layers surrounding the contact plugs. The gate electrodes have side surfaces protruding further toward the contact plugs in the pad regions than ones of the gate electrodes therebelow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.