Trench-gate power MOSFET with buried field plates
US12363984B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 19, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jun 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
Abstract
A semiconductor device includes first to third electrodes, a semiconductor part, a control electrode and an insulating body. The second electrode is opposite to the first electrode. The semiconductor part is provided between the first electrode and the second electrode. The semiconductor part includes first and second trenches next to each other in a front side facing the second electrode. The second trench has a first width in a first direction directed from the first trench toward the second trench. The third electrode and the control electrode are provided inside the first trench. Another third electrode and the insulating body is provided inside the second trench. The insulating body is positioned in the second trench between said another third electrode and the second electrode. The insulating body has a second width in the first direction. The second width is equal to the first width of the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.