Near-infrared light emitting semiconductor element and method for manufacturing same
US12364058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jun 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are: a near infrared light-emitting semiconductor element that does not contain any harmful elements and that makes it possible to obtain near infrared light of a stable wavelength in a narrow band regardless of the operating environment; and a method for producing the near infrared light-emitting semiconductor element. GaN is used in the method for producing a near infrared light-emitting semiconductor element, and an active layer added in order to substitute Tm with Ga is formed on GaN in a reaction container at a growth rate of 0.1-30 μm/h without removal from said reaction container using an organometallic vapor phase growth method under temperature conditions of 600-1400° C. in a series of formation steps including formation of a p-type layer and an n-type layer. GaN is used in the near infrared light-emitting semiconductor element, and said near infrared light-emitting semiconductor element includes an active layer sandwiched between an n-type layer and a p-type layer on a substrate. An organometallic vapor phase growth method is used to add the active layer to the GaN in order to substitute Tm with Ga.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.