Bottom tunnel junction light-emitting field-effect transistors

US12364060B2 · kind B2 · utility

Assignee

• Cornell University · IT

Inventors

• Shyam Bharadwaj · Ithaca, US
• Kevin Lee · San Jose, US
• Kazuki Nomoto · Yokohama, JP
• Austin Hickman · Syosset, US
• Len van Deurzen · Ithaca, US
• Huili Grace Xing · Ithaca, US
• Debdeep Jena · Ithaca, US
• Vladimir Protasenko · Ithaca, US

Key dates

• Filing date: Jul 13, 2021
• Grant date: Jul 15, 2025
• Expiry date: Jul 13, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819

Abstract

A method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire- n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs is described. This method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts, while allowing for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area as in lateral integration designs. Electrical modulation of 5 orders, and an order of magnitude of optical modulation are achieved in the device.