Display apparatus using semiconductor light-emitting device, and manufacturing method therefor
US12364065B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 14, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Sep 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is applicable to display device-related technical fields and, for example, relates to a display device using micro LED (Light Emitting Diode) and a method of manufacturing the same. The present invention includes a substrate including a pixel area and a pad area located around the pixel area; a barrier layer located on the substrate and defining a plurality of unit pixel areas within the pixel area; a stress separation line located between the unit pixel areas on the barrier layer; a first electrode located in the unit pixel area; a semiconductor light emitting device in which a first type electrode is electrically connected to the first electrode within the unit pixel area; a coating layer formed on the semiconductor light emitting device and the barrier layer; and a second electrode electrically connected to the type second electrode of the semiconductor light emitting device on the coating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.