Patent · US Active

LED die having centrally peaked surface luminance

US12364082B2 · kind B2 · utility

0Cited by
1References
20Claims
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Key dates

Filing dateNov 17, 2022
Grant dateJul 15, 2025
Priority date
Expiry dateJan 30, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/855

Abstract

A light-emitting diode (LED) die can include a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material. The LED die can include vias that can electrically power the p-n junction. The vias can optionally be electrically connected in parallel to one another. A controller can supply current to the vias to electrically power the LED die. The vias can be distributed with a density that peaks at or near a center of the LED die and decreases with increasing distances away from the peak of the density, such that when the vias are electrically powered, the LED die emits light with a surface luminance that peaks at or near the center of the LED die and decreases with increasing distances away from the peak of the surface luminance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.