LED die having centrally peaked surface luminance
US12364082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Jan 30, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/855
Abstract
A light-emitting diode (LED) die can include a p-n junction between a p-doped semiconductor material and an n-doped semiconductor material. The LED die can include vias that can electrically power the p-n junction. The vias can optionally be electrically connected in parallel to one another. A controller can supply current to the vias to electrically power the LED die. The vias can be distributed with a density that peaks at or near a center of the LED die and decreases with increasing distances away from the peak of the density, such that when the vias are electrically powered, the LED die emits light with a surface luminance that peaks at or near the center of the LED die and decreases with increasing distances away from the peak of the surface luminance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.