Method for making a perovskite layer at high speed
US12364156B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Sep 29, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/50
Abstract
A method for making a perovskite layer includes providing a substrate; providing a perovskite solution comprising first and second polar, protic solvents each having a boiling point less than 135 degrees Celsius, an inorganic perovskite precursor, and an organic perovskite precursor, wherein the first solvent is an alcohol-based glycol ether capable of dissolving the inorganic Perovskite precursor material, the second solvent is an aliphatic alcohol, and the perovskite solution has a total initial amount of solvent greater than 30 percent by weight and a total solids concentration that is between 30 percent and 70 percent by weight of the Perovskite solution's saturation concentration: depositing the perovskite solution at a temperature of from 20 to 40 degrees Celsius on the substrate at a first location; removing a first portion of the initial amount of solvent from the deposited perovskite solution with a first drying step having a first drying step dwell time at a second location wherein the temperature of the first drying step is maintained between 20 and 40 degrees Celsius and the first drying step increases the total solids concentration of the perovskite solution to at leas…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.