Short-wave infrared materials, detectors, and methods
US12364157B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 1, 2022 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Oct 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Aspects of the present disclosure generally relate to short-wave infrared (SWIR) materials, SWIR detectors, and methods of use. In an aspect, a SWIR detector is provided and includes a conductive layer disposed over a first portion of a substrate, the conductive layer having a trench therein, and a hole transport layer disposed over at least a second portion of the substrate and within the trench of the conductive layer. The SWIR detector further includes a light conversion layer disposed over at least a portion of the hole transport layer, the light conversion layer comprising a composition having the formula AaBbMcXd, wherein: A is an organic group or ion thereof; B is an organic group, an inorganic group, or ion thereof; M is a metal or ion thereof; X is a halogen or ion thereof; and a, b, c, and d are numbers expressing amounts of A, B, M, and X.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.