Semiconductor structure including two shielding layers and manufacturing method thereof
US12364167B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Mar 9, 2021 |
| Grant date | Jul 15, 2025 |
| Priority date | — |
| Expiry date | Aug 17, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1695
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor structure includes: providing a substrate; forming a first shielding layer on the substrate; forming a first electrode penetrating the first shielding layer; forming a storage structure on the first electrode; forming a second shielding layer on the top surface and sidewalls of the storage structure, wherein the first shielding layer and the second shielding layer combine into one integrated shielding layer; and forming a second electrode which penetrates the shielding layer and electrically connects to the storage structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.